Flexible Transistors with Low Temperature Curable Polyimide Gate Insulator
نویسندگان
چکیده
منابع مشابه
Low-Voltage Organic Thin Film Transistors with High-K Bi1.5Zn1.0nb1.5O7 Pyrochlore Gate Insulator
Thin film transistor circuits using organic semiconductors (oTFT) have received intense interest for applications requiring structural flexibility, large area coverage, low temperature processing, and low-cost [1]. Pentacene TFTs have demonstrated the highest performance among TFTs with an organic semiconductor channel. A major limitation, however, has been unusually high operating voltages (20...
متن کاملLow Temperature Polysilicon Thin-Film Transistors on Flexible Substrates
We fabricated low-temperature polycrystalline silicon thin-film transistors (poly-Si TFTs) on flexible substrates using sputtered amorphous Si (a-Si) precursor films. The a-Si precursor films were deposited by using rf-magnetron sputtering system with argon-helium mixture gas to minimize the argon incorporation into the Si film. The a-Si films were laser annealed by using XeCl excimer laser and...
متن کاملElectron mobility in double gate silicon on insulator transistors: Symmetric-gate versus asymmetric-gate configuration
We have studied electron mobility behavior in asymmetric double-gate silicon on insulator ~DGSOI! inversion layers, and compared it to the mobility in symmetric double-gate silicon on insulator devices, where volume inversion has previously been shown to play a very important role, being responsible for the enhancement of the electron mobility. Poisson’s and Schroedinger’s equations have been s...
متن کاملLow-temperature thermal conductivity of polyimide irradiated with Ni ions
The planned International Facility for Antiproton and Ion Research (FAIR) will consist of a superconducting double-ring synchrotron offering ion beams of intensity increased by a factor of 100-1000 compared to the existing GSI accelerators. Materials close to the beam tube will be exposed to secondary radiation of neutrons, protons, and heavier particles, possibly limiting reliable function and...
متن کاملHigh quality interfaces of InAs-on-insulator field-effect transistors with ZrO2 gate dielectrics
transistors with ZrO2 gate dielectrics Kuniharu Takei, Rehan Kapadia, Hui Fang, E. Plis, Sanjay Krishna, and Ali Javey Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA Berkeley Sensor and Actuator Center, University of California, Berkeley, C...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Photopolymer Science and Technology
سال: 2012
ISSN: 0914-9244,1349-6336
DOI: 10.2494/photopolymer.25.381